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MoS2/g-C3N4复合物的制备及光催化性能表征 

时间:2022-10-13 22:11来源:毕业论文
在水热反应釜中运用水热反应法,温度控制在220度时间16 h以钼酸钠(Na2Mo4)和硫脲(NH2CSNH2)为反应物。材料MoS2和g-C3N4水热的方法复合能够得到光催化性能显著提高的复合材料

摘要:g-C3N4是一种研究和应用前景很广阔的半导体光催化剂材料。此类材料具有类石墨烯结构,并且比表面积大,吸附能力强的优点。MoS2是一种属于六方晶系具有层状结构,结构类似于石墨烯。应为其结构原因可作为固体润滑剂,应用于电子机械等领域。还在加氢脱硫催化剂、插层材料、无水锂电池及半导体材料中具有重要作用。本文研究在水热反应釜中运用水热反应法,温度控制在220度时间16 h以钼酸钠(Na2Mo4)和硫脲(NH2CSNH2)为反应物。材料MoS2和g-C3N4水热的方法复合能够得到光催化性能显著提高的复合材料。本篇论文采用水热的方法通过沉淀来制备g-C3N4/MoS2复合材料。将用来制取碳化氮的不同前躯体化合物与钼酸钠在去离子水中混合,且在220℃进行水溶剂热热反应得到所要MoS2和g-C3N4的复合材料。运用XRD检查确定此种复合物内部的组成,然后用SEM表征用来取得到g-C3N4/MoS2复合物的整体的外部形象样子。采取和应用XRD、SEM进行外部样子和内部结构的表征后,很明确的证明制备出了g-C3N4/MoS2复合物材料。g-C3N4与MoS2这样的硫化物半导体物品水热方法复合,能够制备出催化性能明显提高很大的光催化类材料。84479

毕业论文关键词:水热复合材料;性能结构表征;水溶剂热反应

Preparation and Photocatalytic Characterization of MoS2/g-C3N4 composites

Abstract: g-C3N4 research and the application prospect is a very broad semiconductor photocatalyst materials。 The semiconductor material has the class structure of graphene, and specific surface area is large, the advantages of strong adsorption ability。 MoS2 is a kind of belong to the hexagonal system with layered structure, the structure is similar to graphene。 For its structural reasons can be used as solid lubricant, used in electronic, mechanical, and other fields。 Also in hydrodesulfurization catalyst, intercalated materials, anhydrous lithium batteries, and plays an important role in semiconductor materials。 In this paper, we study the water thermal response by applying the method of thermal water in the kettle, the temperature control in 220 degrees time 16 h with sodium molybdate (Na2Mo4) and thiourea (NH2CSNH2) as the reagent。 Material MoS2 and g-C3N4 hydrothermal method of compound can be significantly higher photocatalytic performance of composite materials。 This paper adopts the method of hydrothermal preparation by precipitation g-C3N4/MoS2 composite materials。 Different before the body will be used for preparing carbon nitrogen compounds with sodium molybdate mixed in deionized water, and in 220 degrees hot water solvent reaction to MoS2 and g-C3N4 composite materials。 Using XRD examination to determine the composition of the complex internal, then by scanning electron microscope (SEM) characterization of yukio okamoto, used to obtain the the morphology of g-C3N4/MoS2 compound as a whole。 Take and application of external morphology and internal structure of XRD, SEM characterization, clear proof of the preparation of the g-C3N4/MoS2 composite materials。 g-C3N4 and MoS2 composite sulfide semiconductor items hydrothermal method, can compound the catalytic performance increase a lot of new photocatalytic materials。

Key Words: Hydrothermal; composite materials; The performance structure characterization; Water solvent thermal

目    录

摘  要 1

引  言 2

1 实验部分 3

1。1 实验试剂及仪器 4

1。2 实验步骤 4

2 结果与讨论 6

2。1 X射线衍射分析(XRD) 6

2。2 扫描电镜分析(SEM) MoS2/g-C3N4复合物的制备及光催化性能表征 :http://www.youerw.com/huaxue/lunwen_100280.html

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